Applications

Analog & Power

Smaller Die Sizes mean Lower Cost for Analog and Power

Atomera’s MST-SP technology demonstrates breakthrough performance and density improvements to power and analog devices. Thanks to the combination of dopant profile engineering and mobility improvement made possible by MST, the MST-SP technology can reduce die size of PMICs and other 5V devices by up to 20% without degrading reliability or efficiency.

Analog & Power

Atomera’s MST film enables precise doping control, as shown in the figure above, while also enhancing carrier mobility.  Combined with the asymmetric “SP” device profile, the result is a substantial enhancement to Idlin and BVDSS, as well as enabling further Lg scaling.

Analog & Power

Compared to baseline symmetric 5V NMOS analog transistors, MST-SP has been demonstrated to offer 3x lower specific on resistance (Rsp). Compared to asymmetric 5V analog transistors of similar design, MST-SP offers up to 25% lower Rsp at the same breakdown voltage, BVDSS. The MST-SP breakthrough also applies to 5V PMOS and has applications beyond 5V analog to many other silicon devices, including planar CMOS devices.

By enabling further gate length scaling, MST-SP brings even greater benefits to scaled analog nodes. Projections with design rule scaling for 130nm BCD processes show 40% lower Rsp compared to a 180nm BCD process without MST

Analog & Power

The device improvements do not require any sacrifice in quality – the MST-SP device is robust and meets standard commercial reliability requirements.

Analog & Power

The Result: MST-SP enables a die shrink up to 20% for PMICs and other 5V device applications