Applications
Transistors are everywhere
Quantum-engineered MST epitaxial silicon solves critical bottlenecks, enabling industry-leading semiconductor product performance for each application.
One film, many devices
MST improves transistors enabling device scaling & unlocking performance gains
Planar CMOS
Mature nodes: dopant control, less variability
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FinFET
Fin channel: leakage and variability control
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GAA Nanosheet
Blocks S/D dopant diffusion; cuts RDF
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DRAM FETs
Sense-amp variability; 4F2 vertical channel
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LDMOS (BCD)
Lower Rsp, higher breakdown margin
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Trench MOSFET
High-voltage, high-speed TrenchFET
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HBT (Bipolar)
High-frequency, high-speed bipolar
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GaN-on-Si HEMT
Suppresses the Si/GaN parasitic channel
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RF-SOI FET
Antenna switches and low-noise amplifiers
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Applications
Leading Logic
Gate-all-around transistors with steeper junctions, a lower-resistance contact and a better gate stack.
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DRAM
A pre-doped MST starting wafer for 4F² vertical-channel DRAM: 2.5–3× read/write current in TCAD simulation.
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3D NAND
HV CMOS with better performance leveraging MST Power Devices know-how.
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Analog & Power
Lower on-resistance at the same breakdown and reliability, from 5 V BCD switches to LDMOS.
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GaN-on-Si
A better GaN crystal for power, and low-loss, highly linear GaN-on-Si for RF, from one thin MST layer.
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RF-SOI
Lower Ron·Coff, leakage and cleaner harmonics for RF switches, on thinner top silicon.
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Partner with Atomera
Evaluate MST in your own process and devices with Atomera's engineering team.
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