MSTcad^™

Atomera's TCAD library for Synopsys Sentaurus: model MST in your own process and device flow.

MSTcad™ in action

Source/drain anneal of a 45 nm transistor, with and without MST

Two identical 45 nm transistors, one with MST and one without, through the same source/drain anneal. Colour shows the dopants.

MSTcad™ simulation in Synopsys Sentaurus Process. Simulation results, not measured data.

how MSTcad™ works

Models fitted to real silicon

MSTcad™ models each MST layer as a thin interface inside Synopsys Sentaurus, where silicon defects and dopants are trapped and released. It runs inside your own process flow, so every implant and anneal sees MST. The models are fitted to measured silicon data (SIMS profiles), so simulations match what the fab sees.

Model vs measurementMSTcad™ matches SIMS on thin SOIBoron implanted after MST epi on a 12 nm SOI film, then the full thermal cycle.The MSTcad™ model (red line) follows the measured profile after the thermal cycle (blue squares), including the boron held at the MST and the more than 10× drop above it.

inside a customer flow

STEP 1

Deposit

Add the MST film to your structure, where the epi is grown.

STEP 2

Process

Run your own implant and thermal steps with MST physics on.

STEP 3

Simulate the device

See MST's effect on your device before wafers are run.

License MSTcad™ Learn more: whitepapers & publications

Work with us

Partner with Atomera

Evaluate MST in your own process and devices with Atomera's engineering team.