MST application method

MST Engineered Starting Substrate

MST grown as a blanket film across the starting wafer, creating an engineered substrate.

How it works

substrates can be customized for each end customer and sold through a wafer manufacturer, so the customer starts from a better wafer in its own flow.

Executive summary

Applications

RF-SOI

−13% Ron·Coff

Boron ground plane held next to the buried oxide, on 23% thinner top silicon

GaN-on-Si

≈1000× lower distortion

RF harmonics vs reference GaN-on-Si; >20% better GaN crystal for power

4F² DRAM

2.5–3× read/write current

Pre-doped starting wafer for vertical-channel cells, with 3 fewer process steps

SOI substitute

>10× less phosphorus at the surface

MST holds the doped layer below undoped silicon through the anneal

GAA channel mobility

55% less roughness scattering

Higher mobility at high gate fields; >15% projected for GAA

Work with us

Evaluate MST in your own process and devices with Atomera's engineering team.