News

Atomera Has Signed a Joint Development Agreement With IQE to Bring High-Performance, Cost-Effective RF GaN-on-Silicon to Volume Markets

Media Alert: Atomera to Highlight Advances in 4F² DRAM Transistors and GaN Devices at SISPAD 2026

TXST researchers help solve a persistent problem in next-generation semiconductors

TXST researchers advance semiconductor technology that improves wireless communications.

RF GaN on Silicon Momentum

By: Scott Bibaud, President and CEO, Atomera

Quashing parasitics in RF GaN-on-silicon HEMTs

Facing a dilemma are producers of GaN RF HEMTs, a class of transistor that’s widely deployed for mobile communication and...

Atomera’s Breakthrough RF GaN-on-Si Coverage

Well-renowned editors and news outlets are writing about Atomera's technical breakthrough. Read more about it here.

Atomera Breakthrough Targets Broader RF Adoption of GaN-on-Silicon

MST® Breakthrough for RF GaN on Silicon

HTML Version

Atomera and Synopsys Extend Collaboration to Advance GaN Modeling for RF & Power Semiconductors

Atomera Extends Collaboration With Synopsys to Accelerate GaN Modeling in High-Value RF and Power Devices

The future of chips: how gate-all-around design is powering the AI era and the next node

Artificial intelligence (AI) is transforming how the world builds and uses computer chips. From massive data centers to devices at the edge of the network, AI requires chips continuing to get faster, smaller and more energy-efficient. Read all here

CEO Interview with Scott Bibaud of Atomera

Scott Bibaud has served as President, Chief Executive Officer and a director since October 2015. Mr. Bibaud has been active in the semiconductor industry for over 25 years. Read all here