Applications

Application

GAA Channel Mobility

A smoother silicon surface: higher carrier mobility for gate-all-around nanosheets.

Applications

Leading LogicDRAM3D NANDAnalog & PowerGaN-on-SiRF-SOIWhitepapers All applications

How MST helps

MST cuts the surface-roughness scattering that limits mobility at high gate fields. Scaled gate-all-around devices run at exactly those fields.

Learn more: whitepapers & publications
Electron mobility vs effective field from 4 K to 330 K: MST vs Si control

Silicon data

55% less surface-roughness scattering

Measured from 4 K to 330 K on 5 V thick-oxide devices (San José State University); HKMG mobility with the University of Notre Dame.

55%

lower surface-roughness scattering: higher surface-roughness-limited mobility

1.23×

electron mobility at high field, HKMG on MST

>15%

higher mobility projected for GAA with HKMG (projection)

Electron mobility vs effective field, 4–330 KMST (blue) is above the silicon control (red) at every temperature; the gain grows as phonons freeze out, isolating surface roughness.
HKMG electron mobility on MSTUniversity of Notre Dame (S. Datta) and Atomera, IEEE DRC 2018.

Related

applications Leading Logic

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